Samsung has developed a fast LLW DRAM memory
Samsung is developing a new type of memory called Low Latency Wide I/O (LLW) DRAM, Tom’s Hardware reports.
This memory is characterized by high bandwidth, minimal latency, and low power consumption.
According to information provided by Samsung, LLW DRAM is ideal for artificial intelligence systems based on large language models (LLMs).
The new memory offers wide I/O capabilities, low latency, and a bandwidth of 128 GB/s per module. This is comparable to a combination of DDR5-8000 memory and a 128-bit bus.
One of the key features of LLW DRAM is its low power consumption – only 1.2 pJ/bit, although the specific transmission rate at which this value was measured remains unknown.
Although Samsung has not yet announced the timing of the new memory’s launch, given the published specifications, the development of LLW DRAM is likely to be almost complete.
It is expected that this innovative technology will be used in peripheral computing devices for artificial intelligence systems – smartphones, laptops, and possibly cars.
