Samsung develops new HBM3E 12H chip with record capacity to boost AI power
Samsung Electronics has announced a new high-bandwidth memory chip that has the “highest capacity” in the industry. The South Korean giant claims that the HBM3E 12H “increases productivity by more than 50%.”
AI service providers are increasingly requiring HBMs with higher capacity, and our new HBM3E 12H product was developed to meet this need.
This new memory solution is part of our commitment to develop core technologies for HBM high-stack drives and provide technology leadership in the high-capacity storage market in the age of artificial intelligence
– Yongcheol Bae, Executive Vice President of Memory Products at Samsung Electronics.
Samsung Electronics is the world’s largest manufacturer of dynamic random access memory chips used in consumer devices such as smartphones and computers.
Generative AI models, such as ChatGPT by OpenAI, require a large number of high-performance memory chips. They allow generative AI models to memorize details of past conversations and user preferences to generate human-like responses.
Samsung said it has already started providing samples to customers, and mass production of the HBM3E 12H is scheduled for the first half of 2024. In September, Samsung signed a deal to supply Nvidia with its high-bandwidth memory chips, CNBC reports.
The HBM3E 12H has a 12-ply stack, but uses an advanced heat-compression non-conductive film that enables 12-ply products to be as tall as 8-ply products to meet current HBM packaging requirements. The result is a chip that contains more capacity in the same physical size.
Samsung continues to reduce the thickness of its NCF material and has achieved the industry’s smallest chip-to-chip gap at seven micrometers (µm) while eliminating voids between layers. These efforts resulted in a vertical density increase of more than 20% compared to HBM3 8H.
